The 2SC1973 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on HF band mobile radio applications. |  |
The 2SC1973 is a silicon NPN epitaxial planer type transistor designed for RF amplifiers on HF band mobile radio applications. | |
| Collector-Emitter Voltage (RBE = Infinity), VCEO | 55V |
| Collector-Base Voltage, VCBO | -V |
| Emitter-Base Voltage, VEBO | -V |
| Collector Current, IC | 0,5A |
| Collector Power Dissipation (TA = +25°C), PD | 1W |
| Operating Junction Temperature, TJ | +135°C |
| Storage Temperature Range, Tstg | -55° to +150°C |
| Thermal Resistance, Junction-to-Ambient, RthJA | -°C/W |
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