Collector-Base Voltage, VCBO | 180V |
Collector-Emitter Voltage, VCEO | 160V |
Emitter-Base Voltage, VEBO | 5V |
Collector Current, IC Continuous Peak |
1.5A 3.0A |
Collector Dissipation (TA = +25°C), PC | 1W |
Collector Dissipation (TC = +25°C), PC | 20W |
Operating Junction Temperature, TJ | +150°C |
Storage Temperature Range, Tstg | -55° to +150°C |
Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter | Symbol | Test Conditions | Min | Typ | Max | Unit |
Collector-Base Breakdown Voltage | V(BR)CBO | IC = 1mA, IE = 0 | 180 | - | - | V |
Collector-Emitter Breakdown Voltage | V(BR)CEO | IC = 10mA, RBE = Infinity | 160 | - | - | V |
Emitter-Base Breakdown Voltage | V(BR)EBO | IE = 1mA, IC = 0 | 5 | - | - | V |
Collector Cutoff Current | ICBO | VCB = 160V, IE = 0 | - | - | 10 | µA |
DC Current Gain | hFE | IC = 150mA, VCE = 5V | 60 | - | 200 | |
IC = 500mA, VCE = 5V | 30 | - | - | |||
Collector-Emitter Saturation Voltage | VCE(sat) | IC = 500mA, IB = 50mA | - | - | 1 | V |
Base-Emitter Voltage | VBE | VCE = 5V, IC = 150mA | - | - | 1.5 | V |
Transition Frequency | fT | IC = 500mA, VCE = 5V | - | 140 | - | MHz |
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