2SC2314
Silicon NPN Transistor
RF Power Output, Driver

The 2SC2314 are silicon transistors in a TO-126 type package designed for 27MHz CB Transceiver Driver Applications.

E C B

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO 75V
Collector-Emitter Voltage (RBE = 150 Ohms), VCER 75V
Collector-Emitter Voltage, VCEO 45V
Emitter-Base Voltage, VEB 5V
Collector Current, IC
            Continuous
            Peak		 1.0A
1.5A
Collector Dissipation (TA = +25°C), PD 750mW
Collector Dissipation (TC = +25°C), PD 5W
Operating Junction Temperature, TJ +150°C
Storage Temperature Range, Tstg -55° to +150°C

Electrical Characteristics: (TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Collector Cutoff Current ICBO VCB = 40V, IE = 0 - - 1.0 µA
Emitter Cutoff Current IEBO VEB = 4V, IC = 0 - - 1.0 µA
Collector-Base Breakdown Voltage V(BR)CBO IC = 10µA, IE = 0 75 - - V
Collector-Emitter Breakdown Voltage V(BR)CER IC = 1mA, RBE = 150 Ohms 75 - - V
V(BR)CEO IC = 1mA, RBE = Infinity 45 - - V
Emitter-Base Breakdown Voltage V(BR)EBO IE = 10µA, IC = 0 5 - - V
DC Current Gain hFE VCE = 5V, IC = 500mA 60 - 320  
Gain-Bandwidth Product fT VCE = 10V, IC = 50mA 180 250 - MHz
Collector-Emitter Saturation Voltage VCE(sat) IC = 500mA, IB = 50mA - 0.2 0.6 V
Base-Emitter Saturation Voltage VBE(sat) IC = 500mA, IB = 50mA - 0.9 1.2 V
Output Capacitance Cob VCB = 10V, f = 1MHz - 15 25 pF
Output Power PO VCC = 12V, f = 27MHz, Pi = 35mW 1.0 1.8 - W
Collector Efficiency     60 - - %

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