2SC3356

NPN SILICON EPITAXIAL TRANSISTOR
MICROWAVE LOW NOISE AMPLIFIER
DESCRIPTION
The 2SC3356 is an NPN silicon epitaxial transistor designed for low noise amplifier at VHF, UHF and CATV band. It has dynamic range and good current characteristic.
FEATURES
¥ Low Noise and High Gain
NF = 1.1 dB TYP., Ga = 11 dB TYP. @VCE = 10 V, IC = 7 mA, f = 1.0 GHz
¥ High Power Gain
MAG = 13 dB TYP. @VCE = 10 V, IC = 20 mA, f = 1.0 GHz

Absolute Maximum Ratings: (TA = +25°C unless otherwise specified)
Collector-Base Voltage, VCBO 20V
Collector-Emitter Voltage, VCEO 12V
Emitter-Base Voltage, VEBO 3V
Collector Current, IC 100mA
Total Device Dissipation (TA = +25°C), PD 200mW
Operating Junction Temperature, TJ +150°C
Storage Temperature Range, Tstg -65° to +150°C


Electrical Characteristics:
(TA = +25°C unless otherwise specified)
Parameter Symbol Test Conditions Min Typ Max Unit
Forward Current Transfer Ratio hFE VCE =10V, IC = 20mA 50 120 300  
Gain-Bandwidth Product fT IC = 20mA, VCE = 10V, - 7 - GHz

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